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Advanced Single-Photon Avalanche Diode for 1030 nm (SPAD-1030)

Type: SBIR • Topic: OSD233-004

Description

OUSD (R&E) CRITICAL TECHNOLOGY AREA(S): Space Technology



OBJECTIVE: Develop a single-photon avalanche detector for mm-accurate multi-kHz satellite and lunar laser ranging at 1030 nm.



DESCRIPTION: High-accuracy satellite and lunar laser ranging (SLR/LLR) stations have heavily relied upon the availability of short pulse, frequency-doubled Nd:YAG and Yb:YAG lasers. This has driven SLR/LLR receive-detector development toward fairly wide-use of gated, large-area ( 100 m) Si-based single-pixel sensors having peak photon sensitivity ( 30%) near 532 nm, with quenching circuits and time-walk compensation for <18 picosecond (ps) timing jitter at multi-kHz repetition rates. Operating at 1030/1064 nm, however, provides significant advantages over green systems, including improved eye safety (flash blindness and dazzling) and better atmospheric transmission that manifest in gains in link margin and ranging precision. The aim of this effort is to design and develop a single-photon detector (single pixel, or array) optimized for for 1030 nm SLR/LLR applications according to notional specifications outlined in Table 1.



Table 1. Performance Metrics





Parameter Description


Other Detail


Notional Specifications


Unit




Min


Typical


Max







Spectral response range





≤950 to ³1150


nm




Peak sensitivity wavelength








1030





nm




Effective photosensitive diameter








100





mm




Photon detection efficiency (PDE)


Single photon





³ 30





%




Time walk





-10





+10


ps




Dark count








≤ 2500





Hz




Internal/external gating frequency





1





107


Hz




Gate duration range





0.5





1000


ns




Gate duration step








≤ 100





ps




Reference output


Required





TTL*










Gate output


Required





TTL*










Detection output


Required





TTL*










External gate trigger input


Required





TTL*










Operating temperature





-20





35


°C




Detection head dimension


LxWxH 137x50x50











mm




Control unit dimension


LxWxH 225x170x50











mm




Cooling Time








5





min




Connector type


Preferred





SMA**











*Transitor-Transitor Logic

**SubMiniature version A



PHASE I: Trade study and design of a gated, Geiger-mode single-photon avalanche diode detection head and signal conditioning electronics, including quenching circuit and time-walk compensation logic according to Table 1. Details of the temperature stability and cooling architecture (i.e. thermoelectric cooler stages) shall be articulated. Develop a Phase II plan to build and test the “SPAD-1030” prototype that includes schedule, cost, milestones and a device characterization plan. Deliver detailed trade study, analysis and initial design documentation in a Phase I technical data package.



PHASE II: Design, fabricate, and integrate an engineering development unit of SPAD-1030 , that is consistent with performance identified in notional parameters in Table 1, and with Phase I trade study results and design activities. Characterize the PDE over the spectral response range. Work with a Government Laboratory partner to conduct an evaluation of the engineering development unit SPAD-1030 on an active laser ranging system.

Upon successful developmental test and evaluation of the engineering unit, complete a final design incorporating lessons learned for optimized mission use and performance. Complete a comprehensive Phase III integrated schedule and unit cost estimate for the development, fabrication, and unit test of six (6) prototype SPAD-1030. Deliver engineering development unit, design documentation, and characterization plan, raw data, and analysis of results in a Phase 2 technical data package.



PHASE III DUAL USE APPLICATIONS: Complete final design documentation, performance characterization and factory acceptance test plan. Complete fabrication, integration, updated prototype packaging and comprehensive performance characterization of six (6) SPAD-1030 prototype units according to the plan developed in Phase II. Work with Government Laboratory partner to integrate prototype SPAD-1030 with existing

laser ranging system to verify performance for target mission. Deliver all prototypes and Phase III technical data package.



REFERENCES:


Kirchner, G. & Koidl, F. Compensation of SPAD time-walk effects. J. Opt. A: Pure Appl. 1, 163 (1999);
Procházka, I., Kodet, J. & Blažej, J. Note: Solid state photon counters with sub-picosecond timing stability. Rev. Sci. Instr. 84, 046107 (2013);
Michálek, V., Procházka, I. & Blažej, J. Twenty years of Rad-Hard K14 SPAD in Space Projects. Sensors 15, 18178-18196; doi:10.3390/s150818178 (2015)


KEYWORDS: Time-Walk Compensation; SPAD; 1064 nm; 1030 nm; Satellite Laser Ranging

Overview

National Geospatial-Intelligence Agency announced SBIR Phase I/II titled Advanced Single-Photon Avalanche Diode for 1030 nm (SPAD-1030) on 08/23/23. Applications for topic OSD233-004 (2023) open on 09/20/23 and close on 10/18/23.

Program Details

Est. Value
$50,000 - $250,000 (Phase I) or $750,000 (Phase II)
Duration
6 Months - 1 Year
Size Limit
500 Employees

Awards

Contract and grant awards for topic OSD233-004 2023