70NANB24H269
Cooperative Agreement
Overview
Grant Description
Purpose: Direct Electron LP will develop a new high-speed camera for high-resolution electron backscatter diffraction (HR EBSD) and transmission Kikuchi diffraction (TKD), which will significantly expand the materials properties that can be probed in a scanning electron microscope (SEM).
The camera will include a novel high-resolution (4K x 4K) direct detection sensor optimized for detection of low-energy electrons (~3 - 30 KEV).
The sensor will be a monolithic device, with no gaps or inactive areas.
Activities to be performed: The awardee will demonstrate the feasibility of using a large-format direct detection sensor to perform a variety of measurements using HR EBSD and TKD, and then develop and test a functional prototype of the new high-resolution sensor and high-speed camera system.
Expected outcomes: A new camera system compatible with a range of commercial SEM equipment that enables new materials characterization methods.
Intended beneficiaries: U.S. semiconductor industry using materials characterization during development, quality control, and failure analysis for current and next-generation devices.
Subrecipient activities: The recipient plans to subaward funds for facilities access for demonstrating and testing prototypes, and for technical consulting related to CMOS image sensor design and HR EBSD image processing.
The camera will include a novel high-resolution (4K x 4K) direct detection sensor optimized for detection of low-energy electrons (~3 - 30 KEV).
The sensor will be a monolithic device, with no gaps or inactive areas.
Activities to be performed: The awardee will demonstrate the feasibility of using a large-format direct detection sensor to perform a variety of measurements using HR EBSD and TKD, and then develop and test a functional prototype of the new high-resolution sensor and high-speed camera system.
Expected outcomes: A new camera system compatible with a range of commercial SEM equipment that enables new materials characterization methods.
Intended beneficiaries: U.S. semiconductor industry using materials characterization during development, quality control, and failure analysis for current and next-generation devices.
Subrecipient activities: The recipient plans to subaward funds for facilities access for demonstrating and testing prototypes, and for technical consulting related to CMOS image sensor design and HR EBSD image processing.
Awardee
Funding Goals
TO EXPLORE THE TECHNICAL MERIT OR FEASIBILITY OF AN INNOVATIVE IDEA OR TECHNOLOGY WITH THE AIM OF DEVELOPING A VIABLE PRODUCT OR SERVICE THAT WILL BE INTRODUCED TO THE COMMERCIAL MICROELECTRONICS MARKETPLACE.
Grant Program (CFDA)
Awarding / Funding Agency
Place of Performance
San Diego,
California
92128-4105
United States
Geographic Scope
Single Zip Code
L.P Direct Electron was awarded
Cooperative Agreement 70NANB24H269
worth $289,692
from the National Institute of Standards and Technology in October 2024 with work to be completed primarily in San Diego California United States.
The grant
has a duration of 2 years 6 months and
was awarded through assistance program 11.042 CHIPS Research and Development.
The Cooperative Agreement was awarded through grant opportunity Small Business Innovation Research (SBIR) Program for CHIPS For America – CHIPS Metrology.
SBIR Details
Research Type
SBIR Phase I
Title
High-Resolution EBSD and TKD Direct Detection Camera
Abstract
This project seeks to develop a novel high-speed camera for high-resolution electron backscatter diffraction and transmission Kikuchi diffraction which will significantly expand the materials properties that can be probed with this technique. This project will benefit U.S. industry using materials characterization for current and next-generation microelectronics devices.
Topic Code
8
Solicitation Number
2024-SBIR-CHIPS-01
Status
(Ongoing)
Last Modified 10/4/24
Period of Performance
10/1/24
Start Date
4/30/27
End Date
Funding Split
$289.7K
Federal Obligation
$0.0
Non-Federal Obligation
$289.7K
Total Obligated
Activity Timeline
Additional Detail
Award ID FAIN
70NANB24H269
SAI Number
70NANB24H269_0
Award ID URI
EXE
Awardee Classifications
Small Business
Awarding Office
1333ND DEPT OF COMMERCE NIST
Funding Office
1333ND DEPT OF COMMERCE NIST
Awardee UEI
LM55T19DEWC6
Awardee CAGE
4TPN1
Performance District
CA-51
Senators
Dianne Feinstein
Alejandro Padilla
Alejandro Padilla
Modified: 10/4/24