2514718
Project Grant
Overview
Grant Description
Crest Phase I Center for Ultrawide Bandgap Semiconductor Device Materials
With support from the Centers of Research Excellence in Science and Technology (CREST) and the Engineering Research Centers (ERC), this project aims to facilitate a center for ultrawide bandgap semiconductor device materials and education.
The project plans to combine semiconductor materials fabrication, processing, and characterization strategies along with modern artificial intelligence (AI).
The researchers will focus on ultrawide bandgap (UWBG) semiconductors for next-generation devices operating at high power, high frequency, and under extreme conditions (temperature, radiation, corrosion, etc.).
The center will also train and develop the next generation of technology leaders comprised of graduate and undergraduate students, and postdoctoral researchers.
The project is part of a strategic goal of sustaining and developing research capacity to be a leading research institution in the UWBG semiconductor field within this decade.
The aims of the research are interconnected via three subprojects.
First, implement new fabrication, processing, and doping strategies to produce novel UWBG heterointerfaces.
Second, develop new scanning probe microscopy based UWBG characterization techniques to interrogate UWBG heterointerfaces.
And third, develop UWBG material aware AI-based models to investigate materials and heterostructures.
UWBG semiconductors are an emerging class of materials for future technological demands of tremendously large power handling capacity and high switching speed for high power electronics.
The Centers of Research Excellence in Science and Technology (CREST) program provides support to enhance the research capabilities of institutions through the establishment of centers that effectively integrate education and research.
The Engineering Research Centers program supports collaborative, interdisciplinary research partnerships between universities and industry to advance engineered systems, drive technological innovation, and cultivate a globally competitive engineering workforce for significant societal impact.
This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the foundation's intellectual merit and broader impacts review criteria.
Subawards are not planned for this award.
With support from the Centers of Research Excellence in Science and Technology (CREST) and the Engineering Research Centers (ERC), this project aims to facilitate a center for ultrawide bandgap semiconductor device materials and education.
The project plans to combine semiconductor materials fabrication, processing, and characterization strategies along with modern artificial intelligence (AI).
The researchers will focus on ultrawide bandgap (UWBG) semiconductors for next-generation devices operating at high power, high frequency, and under extreme conditions (temperature, radiation, corrosion, etc.).
The center will also train and develop the next generation of technology leaders comprised of graduate and undergraduate students, and postdoctoral researchers.
The project is part of a strategic goal of sustaining and developing research capacity to be a leading research institution in the UWBG semiconductor field within this decade.
The aims of the research are interconnected via three subprojects.
First, implement new fabrication, processing, and doping strategies to produce novel UWBG heterointerfaces.
Second, develop new scanning probe microscopy based UWBG characterization techniques to interrogate UWBG heterointerfaces.
And third, develop UWBG material aware AI-based models to investigate materials and heterostructures.
UWBG semiconductors are an emerging class of materials for future technological demands of tremendously large power handling capacity and high switching speed for high power electronics.
The Centers of Research Excellence in Science and Technology (CREST) program provides support to enhance the research capabilities of institutions through the establishment of centers that effectively integrate education and research.
The Engineering Research Centers program supports collaborative, interdisciplinary research partnerships between universities and industry to advance engineered systems, drive technological innovation, and cultivate a globally competitive engineering workforce for significant societal impact.
This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the foundation's intellectual merit and broader impacts review criteria.
Subawards are not planned for this award.
Awardee
Funding Goals
THE GOAL OF THIS FUNDING OPPORTUNITY, "CENTERS OF RESEARCH EXCELLENCE IN SCIENCE AND TECHNOLOGY", IS IDENTIFIED IN THE LINK: HTTPS://WWW.NSF.GOV/PUBLICATIONS/PUB_SUMM.JSP?ODS_KEY=NSF23595
Grant Program (CFDA)
Awarding Agency
Funding Agency
Place of Performance
San Marcos,
Texas
78666-4684
United States
Geographic Scope
Single Zip Code
Related Opportunity
Analysis Notes
Amendment Since initial award the total obligations have increased 100% from $3,750,000 to $7,500,000.
Texas State University was awarded
UWBG Semiconductor Center with CREST and ERC Support
Project Grant 2514718
worth $7,500,000
from the Division of Engineering Education and Centers in September 2025 with work to be completed primarily in San Marcos Texas United States.
The grant
has a duration of 5 years and
was awarded through assistance program 47.041 Engineering.
The Project Grant was awarded through grant opportunity Centers of Research Excellence in Science and Technology.
Status
(Ongoing)
Last Modified 8/21/25
Period of Performance
9/1/25
Start Date
8/31/30
End Date
Funding Split
$7.5M
Federal Obligation
$0.0
Non-Federal Obligation
$7.5M
Total Obligated
Activity Timeline
Transaction History
Modifications to 2514718
Additional Detail
Award ID FAIN
2514718
SAI Number
None
Award ID URI
SAI EXEMPT
Awardee Classifications
Public/State Controlled Institution Of Higher Education
Awarding Office
491106 DIVISION OF EQUITY FOR EXCELLENCE IN STEM
Funding Office
490705 DIVISION OF ENGINEERING EDUCATION
Awardee UEI
HS5HWWK1AAU5
Awardee CAGE
3JGQ3
Performance District
TX-15
Senators
John Cornyn
Ted Cruz
Ted Cruz
Modified: 8/21/25