2451318
Project Grant
Overview
Grant Description
SBIR Phase I: Advanced PEALD processing technology using nanosecond pulse power.
The broader impact/commercial impacts of this Small Business Innovation Research (SBIR) Phase I project is in advancing semiconductor processing by providing cutting-edge technology to produce super thin coatings for advanced chips manufacturing.
This technology uses tiniest controlled bursts of electricity to significantly enhance coating quality, eliminate processing steps, lowering costs, and reducing energy usage.
The product will consist of a unique type of power generator, new to semiconductor processing, integrated to an applicator for energizing the gases used in the coating process.
The product protected by strong patents and trade secrets will be sold to leading semiconductor process equipment companies for use on their existing systems, with the company’s product market opportunity projected to be $200 million in year three of production.
Beyond this first thin coating application, the technology can be extended to other advanced semiconductor applications, further growing the company’s market opportunity to over $500M.
This Small Business Innovation Research (SBIR) Phase I project addresses the limitations of current plasma enhanced atomic layer deposition to cost-effectively deposit hydrogen free, conformal oxide and nitride films.
A new solution to semiconductor plasma processing is proposed using an array of micro-plasma dielectric barrier discharge applicators, powered by nanosecond scale high voltage pulses, capable of breaking down non-hydrogen containing reactants such as nitrogen thus avoiding hydrogen containing reactants such as ammonia, and achieve improved film conformality by eliminating ion bias induced anisotropic deposition.
Research objectives are, firstly, characterize a set of 5 applicators over a range of physical electrode configurations, gas types, flow rates and pressure, and electrical pulse parameters, to determine optimum conditions for producing desired radicals and active species, whilst avoiding undesirable plasma breakdown regimes.
Fourier transform infrared spectroscopy (FTIR) and spectrometry will be used to measure gas breakdown effectiveness, with photoresist removal by oxygen used to determine surface reaction rates.
Secondly, data gathered from an existing nanosecond high voltage pulsed generator will define Phase 2 generator specifications.
Thirdly, 75 mm diameter ceramic-metal arrays containing multiple applicators, capable of scale up to 300 mm wafer processing size, will be tested.
Data will be the basis of seeking PEALD demonstration on customer’s test chambers.
This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the foundation's intellectual merit and broader impacts review criteria.
Subawards are not planned for this award.
The broader impact/commercial impacts of this Small Business Innovation Research (SBIR) Phase I project is in advancing semiconductor processing by providing cutting-edge technology to produce super thin coatings for advanced chips manufacturing.
This technology uses tiniest controlled bursts of electricity to significantly enhance coating quality, eliminate processing steps, lowering costs, and reducing energy usage.
The product will consist of a unique type of power generator, new to semiconductor processing, integrated to an applicator for energizing the gases used in the coating process.
The product protected by strong patents and trade secrets will be sold to leading semiconductor process equipment companies for use on their existing systems, with the company’s product market opportunity projected to be $200 million in year three of production.
Beyond this first thin coating application, the technology can be extended to other advanced semiconductor applications, further growing the company’s market opportunity to over $500M.
This Small Business Innovation Research (SBIR) Phase I project addresses the limitations of current plasma enhanced atomic layer deposition to cost-effectively deposit hydrogen free, conformal oxide and nitride films.
A new solution to semiconductor plasma processing is proposed using an array of micro-plasma dielectric barrier discharge applicators, powered by nanosecond scale high voltage pulses, capable of breaking down non-hydrogen containing reactants such as nitrogen thus avoiding hydrogen containing reactants such as ammonia, and achieve improved film conformality by eliminating ion bias induced anisotropic deposition.
Research objectives are, firstly, characterize a set of 5 applicators over a range of physical electrode configurations, gas types, flow rates and pressure, and electrical pulse parameters, to determine optimum conditions for producing desired radicals and active species, whilst avoiding undesirable plasma breakdown regimes.
Fourier transform infrared spectroscopy (FTIR) and spectrometry will be used to measure gas breakdown effectiveness, with photoresist removal by oxygen used to determine surface reaction rates.
Secondly, data gathered from an existing nanosecond high voltage pulsed generator will define Phase 2 generator specifications.
Thirdly, 75 mm diameter ceramic-metal arrays containing multiple applicators, capable of scale up to 300 mm wafer processing size, will be tested.
Data will be the basis of seeking PEALD demonstration on customer’s test chambers.
This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the foundation's intellectual merit and broader impacts review criteria.
Subawards are not planned for this award.
Awardee
Funding Goals
THE GOAL OF THIS FUNDING OPPORTUNITY, "NSF SMALL BUSINESS INNOVATION RESEARCH / SMALL BUSINESS TECHNOLOGY TRANSFER PHASE I PROGRAMS", IS IDENTIFIED IN THE LINK: HTTPS://WWW.NSF.GOV/PUBLICATIONS/PUB_SUMM.JSP?ODS_KEY=NSF24579
Grant Program (CFDA)
Awarding / Funding Agency
Place of Performance
Los Altos,
California
94024-4732
United States
Geographic Scope
Single Zip Code
Stellar Engiine was awarded
Project Grant 2451318
worth $305,000
from National Science Foundation in April 2025 with work to be completed primarily in Los Altos California United States.
The grant
has a duration of 5 months and
was awarded through assistance program 47.084 NSF Technology, Innovation, and Partnerships.
The Project Grant was awarded through grant opportunity NSF Small Business Innovation Research / Small Business Technology Transfer Phase I Programs.
SBIR Details
Research Type
SBIR Phase I
Title
SBIR Phase I: Advanced PEALD Processing Technology using Nanosecond Pulse Power
Abstract
The broader impact/commercial impacts of this Small Business Innovation Research (SBIR) phase I project is in advancing semiconductor processing by providing cutting-edge technology to produce super thin coatings for advanced chips manufacturing. This technology uses tiniest controlled bursts of electricity to significantly enhance coating quality, eliminate processing steps, lowering costs, and reducing energy usage. The product will consist of a unique type of power generator, new to semiconductor processing, integrated to an applicator for energizing the gases used in the coating process. The product protected by strong patents and trade secrets will be sold to leading semiconductor process equipment companies for use on their existing systems, with company’s product market opportunity projected to be $200 million in year three of production. Beyond this first thin coating application, the technology can be extended to other advanced semiconductor applications, further growing company’s market opportunity to over $500M. This Small Business Innovation Research (SBIR) Phase I project addresses the limitations of current plasma enhanced atomic layer deposition to cost-effectively deposit hydrogen free, conformal oxide and nitride films. A new solution to semiconductor plasma processing is proposed using an array of micro-plasma dielectric barrier discharge applicators, powered by nanosecond scale high voltage pulses, capable of breaking down non-hydrogen containing reactants such as nitrogen thus avoiding hydrogen containing reactants such as ammonia, and achieve improved film conformality by eliminating ion bias induced anisotropic deposition. Research objectives are, firstly, characterize set of 5 applicators over a range of physical electrode configurations, gas types, flow rates and pressure, and electrical pulse parameters, to determine optimum conditions for producing desired radicals and active species, whilst avoiding undesirable plasma breakdown regimes
Topic Code
S
Solicitation Number
NSF 24-579
Status
(Complete)
Last Modified 2/20/25
Period of Performance
4/1/25
Start Date
9/30/25
End Date
Funding Split
$305.0K
Federal Obligation
$0.0
Non-Federal Obligation
$305.0K
Total Obligated
Activity Timeline
Additional Detail
Award ID FAIN
2451318
SAI Number
None
Award ID URI
SAI EXEMPT
Awardee Classifications
Small Business
Awarding Office
491503 TRANSLATIONAL IMPACTS
Funding Office
491503 TRANSLATIONAL IMPACTS
Awardee UEI
MD7ETBCYW8W7
Awardee CAGE
None
Performance District
CA-16
Senators
Dianne Feinstein
Alejandro Padilla
Alejandro Padilla
Modified: 2/20/25