2420854
Project Grant
Overview
Grant Description
Sttr Phase I: Ultrascalable non-volatile memory with multifunctionality by MOCVD direct growth two-dimensional materials.
The broader impact/commercial potential of this Small Business Technology Transfer (STTR) project is to advance the development of high-performance, energy-efficient artificial intelligence (AI) hardware.
The proposed innovation enables the scalable integration of adaptive, non-volatile memory elements based on atomically thin molybdenum disulfide (MoS2) into complex silicon trench structures.
This approach promises to overcome density and bandwidth limitations in current memory technologies, providing a platform for specialized AI accelerators with tightly coupled computation and storage.
Successful commercialization could significantly enhance the capabilities of machine learning systems across various domains, offering societal benefits in fields such as healthcare, transportation, and scientific research.
The project fosters collaboration among academic institutions, government agencies, and industry partners, strengthening the U.S. position in the strategically important AI hardware sector.
This STTR Phase I project proposes to develop a novel manufacturing process for integrating two-dimensional (2D) MoS2 material into trenches composed of CMOS-compatible materials to make high-density memristors in a high-aspect-ratio microstructure.
The goal is to demonstrate the feasibility of directly growing conformal MoS2 monolayers on complex 3D topographies using a low-temperature metalorganic chemical vapor deposition (MOCVD) technique.
The research objectives include optimizing the growth parameters to achieve reliable resistive switching performance and assessing the scalability of the integration scheme.
The anticipated technical results comprise a proof-of-concept demonstration of multifunctional MoS2 memristor arrays with improved storage density as well as fabrication process uniformity compared to planar designs.
This project aims to establish the groundwork for further development of this technology toward commercially viable AI hardware solutions for less energy-hungry, multifunctional, and highly efficient computing.
This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the foundation's intellectual merit and broader impacts review criteria.
Subawards are planned for this award.
The broader impact/commercial potential of this Small Business Technology Transfer (STTR) project is to advance the development of high-performance, energy-efficient artificial intelligence (AI) hardware.
The proposed innovation enables the scalable integration of adaptive, non-volatile memory elements based on atomically thin molybdenum disulfide (MoS2) into complex silicon trench structures.
This approach promises to overcome density and bandwidth limitations in current memory technologies, providing a platform for specialized AI accelerators with tightly coupled computation and storage.
Successful commercialization could significantly enhance the capabilities of machine learning systems across various domains, offering societal benefits in fields such as healthcare, transportation, and scientific research.
The project fosters collaboration among academic institutions, government agencies, and industry partners, strengthening the U.S. position in the strategically important AI hardware sector.
This STTR Phase I project proposes to develop a novel manufacturing process for integrating two-dimensional (2D) MoS2 material into trenches composed of CMOS-compatible materials to make high-density memristors in a high-aspect-ratio microstructure.
The goal is to demonstrate the feasibility of directly growing conformal MoS2 monolayers on complex 3D topographies using a low-temperature metalorganic chemical vapor deposition (MOCVD) technique.
The research objectives include optimizing the growth parameters to achieve reliable resistive switching performance and assessing the scalability of the integration scheme.
The anticipated technical results comprise a proof-of-concept demonstration of multifunctional MoS2 memristor arrays with improved storage density as well as fabrication process uniformity compared to planar designs.
This project aims to establish the groundwork for further development of this technology toward commercially viable AI hardware solutions for less energy-hungry, multifunctional, and highly efficient computing.
This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the foundation's intellectual merit and broader impacts review criteria.
Subawards are planned for this award.
Awardee
Funding Goals
THE GOAL OF THIS FUNDING OPPORTUNITY, "NSF SMALL BUSINESS INNOVATION RESEARCH (SBIR)/ SMALL BUSINESS TECHNOLOGY TRANSFER (STTR) PROGRAMS PHASE I", IS IDENTIFIED IN THE LINK: HTTPS://WWW.NSF.GOV/PUBLICATIONS/PUB_SUMM.JSP?ODS_KEY=NSF23515
Grant Program (CFDA)
Awarding / Funding Agency
Place of Performance
Philadelphia,
Pennsylvania
19146-2700
United States
Geographic Scope
Single Zip Code
Goeppert was awarded
Project Grant 2420854
worth $275,000
from National Science Foundation in September 2024 with work to be completed primarily in Philadelphia Pennsylvania United States.
The grant
has a duration of 1 year and
was awarded through assistance program 47.084 NSF Technology, Innovation, and Partnerships.
The Project Grant was awarded through grant opportunity NSF Small Business Innovation Research / Small Business Technology Transfer Phase I Programs.
SBIR Details
Research Type
STTR Phase I
Title
STTR Phase I: Ultrascalable Non-volatile Memory with Multifunctionality by MOCVD Direct Growth Two-Dimensional Materials
Abstract
The broader impact/commercial potential of this Small Business Technology Transfer (STTR) project is to advance the development of high-performance, energy-efficient artificial intelligence (AI) hardware. The proposed innovation enables the scalable integration of adaptive, non-volatile memory elements based on atomically thin molybdenum disulfide (MoS2) into complex silicon trench structures. This approach promises to overcome density and bandwidth limitations in current memory technologies, providing a platform for specialized AI accelerators with tightly coupled computation and storage. Successful commercialization could significantly enhance the capabilities of machine learning systems across various domains, offering societal benefits in fields such as healthcare, transportation, and scientific research. The project fosters collaboration among academic institutions, government agencies, and industry partners, strengthening the U.S. position in the strategically important AI hardware sector.
This STTR Phase I project proposes to develop a novel manufacturing process for integrating two-dimensional (2D) MoS2 material into trenches composed of CMOS-compatible materials to make high-density memristors in a high-aspect-ratio microstructure. The goal is to demonstrate the feasibility of directly growing conformal MoS2 monolayers on complex 3D topographies using a low-temperature metalorganic chemical vapor deposition (MOCVD) technique. The research objectives include optimizing the growth parameters to achieve reliable resistive switching performance and assessing the scalability of the integration scheme. The anticipated technical results comprise a proof-of-concept demonstration of multifunctional MoS2 memristor arrays with improved storage density as well as fabrication process uniformity compared to planar designs. This project aims to establish the groundwork for further development of this technology toward commercially viable AI hardware solutions for less energy-hungry, multifunctional, and highly efficient computing.
This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
Topic Code
SP
Solicitation Number
NSF 23-515
Status
(Ongoing)
Last Modified 9/25/24
Period of Performance
9/15/24
Start Date
8/31/25
End Date
Funding Split
$275.0K
Federal Obligation
$0.0
Non-Federal Obligation
$275.0K
Total Obligated
Activity Timeline
Additional Detail
Award ID FAIN
2420854
SAI Number
None
Award ID URI
SAI EXEMPT
Awardee Classifications
Small Business
Awarding Office
491503 TRANSLATIONAL IMPACTS
Funding Office
491503 TRANSLATIONAL IMPACTS
Awardee UEI
G557RMJZM5H5
Awardee CAGE
7W7H3
Performance District
PA-03
Senators
Robert Casey
John Fetterman
John Fetterman
Modified: 9/25/24