2334387
Project Grant
Overview
Grant Description
Sbir Phase I: Silicon Carbide Radio Frequency Switches -this small business innovation research (SBIR) Phase I project focuses on wireless communication technology, specifically the development of a special semiconductor known as silicon carbide (SiC), which has the potential to revolutionize the industry.
Unlike traditional semiconductors, SiC can operate at much higher power levels and in harsh environments, making it ideal for wireless communication devices. Currently, the industry predominantly relies on gallium nitride (GaN) semiconductors, which are not only rare but also mostly imported, raising national security concerns.
By demonstrating that SiC can match or even surpass the performance of GaN in radio frequency (RF) applications, this project aims to pave the way for a robust SiC RF semiconductor industry within the United States (U.S.). The RF switch market alone is estimated to be worth $2 billion by 2024.
A successful SiC RF switch product would not only capture a significant share of this market but also establish the U.S. as a leader in RF semiconductor technology. The project has the potential to create jobs, foster innovation within the domestic semiconductor industry, and enhance national security by reducing reliance on foreign-produced semiconductor materials.
This small business innovation research (SBIR) Phase I project will produce commercially competitive RF switches made from SiC. The RF switches are intended for use in sub-6 GHz cellular infrastructure applications, such as base stations, where high power and ruggedness are difficult to achieve in conventional silicon-based technologies.
SiC and, more specifically, SiC metal-oxide-semiconductor field-effect transistors (MOSFETs), have gained significant market share in the electric vehicle industry. In contrast, SiC MOSFETs are essentially non-existent in the RF industry. The main reasons are poor mobility, resulting in high on-state resistance, and high off-state capacitance.
For an RF switch, the product on-state resistance and off-state capacitance are critical specifications, with lower numbers being better. This project develops two semiconductor innovations to reduce these factors while handling high power levels.
Research focuses on developing the semiconductor fabrication processes to produce an RF switch integrated circuit product that is competitive with existing high power RF switches, such as those made from GaN having insertion losses less than 0.8 dB up to 6 GHz, isolation of around 20 dB, and handling high peak RF power levels of 50 dBm/100 W.
This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the foundation's intellectual merit and broader impacts review criteria.- Subawards are not planned for this award.
Unlike traditional semiconductors, SiC can operate at much higher power levels and in harsh environments, making it ideal for wireless communication devices. Currently, the industry predominantly relies on gallium nitride (GaN) semiconductors, which are not only rare but also mostly imported, raising national security concerns.
By demonstrating that SiC can match or even surpass the performance of GaN in radio frequency (RF) applications, this project aims to pave the way for a robust SiC RF semiconductor industry within the United States (U.S.). The RF switch market alone is estimated to be worth $2 billion by 2024.
A successful SiC RF switch product would not only capture a significant share of this market but also establish the U.S. as a leader in RF semiconductor technology. The project has the potential to create jobs, foster innovation within the domestic semiconductor industry, and enhance national security by reducing reliance on foreign-produced semiconductor materials.
This small business innovation research (SBIR) Phase I project will produce commercially competitive RF switches made from SiC. The RF switches are intended for use in sub-6 GHz cellular infrastructure applications, such as base stations, where high power and ruggedness are difficult to achieve in conventional silicon-based technologies.
SiC and, more specifically, SiC metal-oxide-semiconductor field-effect transistors (MOSFETs), have gained significant market share in the electric vehicle industry. In contrast, SiC MOSFETs are essentially non-existent in the RF industry. The main reasons are poor mobility, resulting in high on-state resistance, and high off-state capacitance.
For an RF switch, the product on-state resistance and off-state capacitance are critical specifications, with lower numbers being better. This project develops two semiconductor innovations to reduce these factors while handling high power levels.
Research focuses on developing the semiconductor fabrication processes to produce an RF switch integrated circuit product that is competitive with existing high power RF switches, such as those made from GaN having insertion losses less than 0.8 dB up to 6 GHz, isolation of around 20 dB, and handling high peak RF power levels of 50 dBm/100 W.
This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the foundation's intellectual merit and broader impacts review criteria.- Subawards are not planned for this award.
Awardee
Funding Goals
THE GOAL OF THIS FUNDING OPPORTUNITY, "NSF SMALL BUSINESS INNOVATION RESEARCH (SBIR)/ SMALL BUSINESS TECHNOLOGY TRANSFER (STTR) PROGRAMS PHASE I", IS IDENTIFIED IN THE LINK: HTTPS://WWW.NSF.GOV/PUBLICATIONS/PUB_SUMM.JSP?ODS_KEY=NSF23515
Grant Program (CFDA)
Awarding / Funding Agency
Place of Performance
San Jose,
California
95120-1817
United States
Geographic Scope
Single Zip Code
Carbide Radio was awarded
Project Grant 2334387
worth $275,000
from National Science Foundation in December 2023 with work to be completed primarily in San Jose California United States.
The grant
has a duration of 1 year and
was awarded through assistance program 47.084 NSF Technology, Innovation, and Partnerships.
The Project Grant was awarded through grant opportunity NSF Small Business Innovation Research / Small Business Technology Transfer Phase I Programs.
SBIR Details
Research Type
SBIR Phase I
Title
SBIR Phase I: Silicon Carbide Radio Frequency Switches
Abstract
This Small Business Innovation Research (SBIR) Phase I project focuses on wireless communication technolog, specifically the development of a special semiconductor known as silicon carbide (SiC), which has the potential to revolutionize the industry. Unlike traditional semiconductors, SiC can operate at much higher power levels and in harsh environments, making it ideal for wireless communication devices. Currently, the industry predominantly relies on gallium nitride (GaN) semiconductors, which are not only rare but also mostly imported, raising national security concerns. By demonstrating that SiC can match or even surpass the performance of GaN in radio frequency (RF) applications, this project aims to pave the way for a robust SiC RF semiconductor industry within the United States (U.S.). The RF switch market alone is estimated to be worth $2 billion by 2024. A successful SiC RF switch product would not only capture a significant share of this market but also establish the U.S, as a leader in RF semiconductor technology. The project has the potential to create jobs, foster innovation within the domestic semiconductor industry, and enhance national security by reducing reliance on foreign-produced semiconductor materials.
This Small Business Innovation Research (SBIR) Phase I project will produce commercially competitive RF switches made from SiC. The RF switches are intended for use in sub-6 GHz cellular infrastructure applications, such as base stations, where high power and ruggedness are difficult to achieve in conventional silicon-based technologies. SiC and, more specifically, SiC metal-oxide-semiconductor field-effect transistors (MOSFETs), have gained significant market share in the electric vehicle industry. In contrast, SiC MOSFETs are essentially non-existent in the RF industry. The main reasons are poor mobility, resulting in high on-state resistance, and high off-state capacitance. For an RF switch, the product on-state resistance and off-state capacitance are critical specifications, with lower numbers being better. This project develops two semiconductor innovations to reduce these factors while handling high power levels. Research focuses on developing the semiconductor fabrication processes to produce an RF switch integrated circuit product that is competitive with existing high power RF switches, such as those made from GaN having insertion losses less than 0.8 dB up to 6 GHz, isolation of around 20 dB, and handling high peak RF power levels of 50 dBm/100 W.
This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
Topic Code
S
Solicitation Number
NSF 23-515
Status
(Complete)
Last Modified 1/21/24
Period of Performance
12/1/23
Start Date
11/30/24
End Date
Funding Split
$275.0K
Federal Obligation
$0.0
Non-Federal Obligation
$275.0K
Total Obligated
Activity Timeline
Additional Detail
Award ID FAIN
2334387
SAI Number
None
Award ID URI
SAI EXEMPT
Awardee Classifications
Small Business
Awarding Office
491503 TRANSLATIONAL IMPACTS
Funding Office
491503 TRANSLATIONAL IMPACTS
Awardee UEI
HNF8DYW2CWW3
Awardee CAGE
9BWJ4
Performance District
CA-19
Senators
Dianne Feinstein
Alejandro Padilla
Alejandro Padilla
Modified: 1/21/24