2233368
Project Grant
Overview
Grant Description
Sbir Phase I: Sonic Lift-Off (SLO) for Lower Cost Wide Bandgap Devices - The broader impact of this Small Business Innovation Research (SBIR) Phase I project will be to accelerate the emergence of next-generation semiconductors, beyond silicon, with increased performance and efficiency across a wide range of applications, including those essential for the nation's future energy and communications infrastructure.
By replacing the most wasteful and costly step in the semiconductor manufacturing process, the proposed research will use sound (acoustic) energy to precisely cut semiconductor materials in a way that minimizes waste and enables materials reuse. This technology will dramatically decrease manufacturing costs and, as a result, lead to the accelerated development of faster, smaller, and more efficient devices.
This SBIR Phase I project will develop a new approach to lower the cost of advanced semiconductor manufacturing by using sound energy to lift off thin devices from their host substrates. The innovative approach taken in this project uses a technique to propagate a crack front at a precise depth below the device layer of a wafer with the application of acoustic pulses. This acoustic method wastes no material and, most importantly, makes it possible to reuse the substrate, which is currently wasted using standard approaches such as mechanical back grinding.
As the single largest cost in manufacturing next-generation devices based on gallium nitride, the substrate material plays a key role in achieving higher performance and efficiencies compared to silicon devices. Making more efficient use of this material directly addresses a pressing need to find solutions that drive down manufacturing costs and accelerates the adoption of new semiconductor innovations ranging from power electronics to communications devices and beyond.
This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
By replacing the most wasteful and costly step in the semiconductor manufacturing process, the proposed research will use sound (acoustic) energy to precisely cut semiconductor materials in a way that minimizes waste and enables materials reuse. This technology will dramatically decrease manufacturing costs and, as a result, lead to the accelerated development of faster, smaller, and more efficient devices.
This SBIR Phase I project will develop a new approach to lower the cost of advanced semiconductor manufacturing by using sound energy to lift off thin devices from their host substrates. The innovative approach taken in this project uses a technique to propagate a crack front at a precise depth below the device layer of a wafer with the application of acoustic pulses. This acoustic method wastes no material and, most importantly, makes it possible to reuse the substrate, which is currently wasted using standard approaches such as mechanical back grinding.
As the single largest cost in manufacturing next-generation devices based on gallium nitride, the substrate material plays a key role in achieving higher performance and efficiencies compared to silicon devices. Making more efficient use of this material directly addresses a pressing need to find solutions that drive down manufacturing costs and accelerates the adoption of new semiconductor innovations ranging from power electronics to communications devices and beyond.
This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
Awardee
Grant Program (CFDA)
Awarding / Funding Agency
Place of Performance
Phoenix,
Arizona
85003-1020
United States
Geographic Scope
Single Zip Code
Related Opportunity
None
Crystal Sonic was awarded
Project Grant 2233368
worth $275,000
from National Science Foundation in May 2023 with work to be completed primarily in Phoenix Arizona United States.
The grant
has a duration of 8 months and
was awarded through assistance program 47.084 NSF Technology, Innovation, and Partnerships.
SBIR Details
Research Type
SBIR Phase I
Title
SBIR Phase I:Sonic Lift-Off (SLO) for Lower Cost Wide Bandgap Devices
Abstract
The broader impact of this Small Business Innovation Research (SBIR) Phase I project will be to accelerate the emergence of next-generation semiconductors, beyond silicon, with increased performance and efficiency across a wide range of applications, including those essential for the Nation’s future energy and communications infrastructure. By replacing the most wasteful and costly step in the semiconductor manufacturing process, the proposed research will use sound (acoustic) energy to precisely cut semiconductor materials in a way that minimizes waste and enables materials reuse. This technology will dramatically decrease manufacturing costs and, as a result, lead to the accelerated development of faster, smaller, and more efficient devices. _x000D_ _x000D_ This SBIR Phase I project will develop a new approach to lower the cost of advanced semiconductor manufacturing by using sound energy to lift off thin devices from their host substrates. The innovative approach taken in this project uses a technique to propagate a crack front at a precise depth below the device layer of a wafer with the application of acoustic pulses. This acoustic method wastes no material and, most importantly, makes it possible to reuse the substrate, which is currently wasted using standard approaches such as mechanical back grinding. As the single largest cost in manufacturing next-generation devices based on gallium nitride, the substrate material plays a key role in achieving higher performance and efficiencies compared to silicon devices. Making more efficient use of this material directly addresses a pressing need to find solutions that drive down manufacturing costs and accelerates the adoption of new semiconductor innovations ranging from power electronics to communications devices and beyond._x000D_ _x000D_ This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
Topic Code
S
Solicitation Number
NSF 22-551
Status
(Complete)
Last Modified 5/4/23
Period of Performance
5/1/23
Start Date
1/31/24
End Date
Funding Split
$275.0K
Federal Obligation
$0.0
Non-Federal Obligation
$275.0K
Total Obligated
Activity Timeline
Additional Detail
Award ID FAIN
2233368
SAI Number
None
Award ID URI
SAI EXEMPT
Awardee Classifications
Small Business
Awarding Office
491503 TRANSLATIONAL IMPACTS
Funding Office
491503 TRANSLATIONAL IMPACTS
Awardee UEI
H3PSKD4G2HB7
Awardee CAGE
8CUV9
Performance District
03
Senators
Kyrsten Sinema
Mark Kelly
Mark Kelly
Representative
Ruben Gallego
Budget Funding
| Federal Account | Budget Subfunction | Object Class | Total | Percentage |
|---|---|---|---|---|
| Research and Related Activities, National Science Foundation (049-0100) | General science and basic research | Grants, subsidies, and contributions (41.0) | $275,000 | 100% |
Modified: 5/4/23