2208366

Sbir Phase I: Low Noise Amplifier Running Fast at Ultra-Low Currents (PP # 00035239) -The broader impact/commercial potential of this Phase I project is the development of a fundamental electronic building block (i.e., smart amplifier) situated near sensors in Internet of Things (IoT) applications, thereby enabling ultra-portable, ultra-low power integrated circuit (IC) uses in medical (including wearables), industrial, defense, and environmental applications.

Existing amplifier ICs (fabricated in low-cost conventional fabrication) are not smart and cannot simultaneously alter noise, power, gain, and speed performance in response to different input conditions. The proposed innovation enables new, commercially viable, impactful products at the intersection of machine learning, IoT, and sensors.

Applications employing such a building block include: (1) battery operated necklaces with always-on sound sensors and smart amplifiers, plus localized machine learning to detect and warn of asthma attacks; (2) multiple always-on ultra-low power, low-noise smart amplifiers near denture or filling-implanted sensors that simultaneously read levels of sugar, salt, acidity, and temperature, with harvested energy from chewing; and (3) "always-on" toxicity sensors having thermo-resistors whose resistivity changes upon detecting toxic chemicals or gases.

The innovation enables fast response times by delivering sufficient output sink-source current to continuously drive the thermo-resistors between low and high toxicity conditions. This small business innovation research (SBIR) Phase I project will develop an integrated circuit (IC) smart amplifier that intelligently alters its performance in response to input conditions.

Anticipated technical results include: ultra-low-power, low-noise, high-speed, near-zero input-current, high-gain, high power-supply-rejection-ratio, high common-mode-rejection-ratio, unconditional stability, rail-to-rail input and output voltage swings, and an output buffer having source and sink load capability performance, all in one tiny silicon amplifier. The proposed smart amplifier is capable of providing all of these parameters in a single IC.

In this Phase I project, the company will develop this IC amplifier based on a novel circuit design that intelligently alters its speed, noise, and gain in response to small signals and large signals applied to its inputs. As a fundamental building block, the resulting smart amplifier will be manufacturable using conventional, low cost, 65 nanometer IC fabrication processes, and will enable many emerging ultra-portable, ultra-low power "always-on" IoT, smart sensors, and localized tiny machine learning applications situated at the edge of the cloud, without the need for continuous internet connectivity.

This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

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47.084 - NSF Technology, Innovation, and Partnerships

National Science Foundation (NSF)

Saratoga, California 95070-6272 United States

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