W911NF24C0041
Definitive Contract
Overview
Government Description
Atomic Fusion Wafer Bonding Tool for Ultra-high-power
Switches
Awardee
Awarding Agency
Funding Agency
PSC
Place of Performance
Vista, CA 92081 United States
Pricing
Fixed Price
Set Aside
Small Business Set Aside - Total (SBA)
Extent Competed
Full And Open Competition After Exclusion Of Sources
Est. Average FTE
4
Related Opportunity
None
Analysis Notes
Amendment Since initial award the Potential End Date has been extended from 02/28/26 to 05/31/26.
Partow Technologies was awarded
Definitive Contract W911NF24C0041 (W911NF-24-C-0041)
for Atomic Fusion Wafer Bonding Tool For Ultra-High-Power
Switches
worth up to $1,699,828
by OUSD Research & Engineering
in March 2024.
The contract
has a duration of 2 years 2 months and
was awarded
through SBIR Topic Ultra-Pure Atomic Wafer Fusion for Ultra-Wide Bandgap, Ultra-High Power, High Thermal Conductivity Power Switches
with a Small Business Total set aside
with
NAICS 541715 and
PSC AJ11
via direct negotiation acquisition procedures with 4 bids received.
SBIR Details
Research Type
Small Technology Transfer Research Program (STTR) Phase II
Title
Atomic fusion wafer bonding tool for ultra-high power switches
Related Solicitation
Abstract
High power electronic systems with small Size, Weight and Power (SWaP) are required in many military and industrial applications. GaN and Ga2O3 are two ultra-wide band gap (UWBG) materials that are commonly used in power electronic applications, due to their high critical field and high electron mobility. The maximum output power in these materials is limited by near-junction Joule-heating, which in turn reduces device performance and reliability. The main approach to resolve heat dissipation problem is to use a high material with high thermal conductivity such as SiC as the substrate. Though, grown GaN on SiC shows higher thermal conductivity; however, the heat dissipation flow disrupts in the interface due to the defects in grown semiconductor material. The direct bonding of these semiconductors to SiC with an intermediate layer can increase the heat transfer in the junction and in turn helps to achieve higher performance and more reliable power electronic devices needed by Navy and DoD. Heterogeneous wafer bonding can be done using surface activation. Here, we will develop a bonding system that employs either surface activation or surface activated diffusion to achieve heterogenous bonding between semiconductor wafer and SiC wafer. In addition to power electronic systems, the developed surface activated bonding system can be used in developing heterogeneous wafer structures that are used in the integrated photonic applications. For example, transferring thin film lithium niobate (TFLN) to silicon wafer can provide the electro-optic and nonlinear properties required for amplification or high-fidelity modulation, where silicon photonic integrated circuits cannot achieve.
Research Objective
The goal of phase II is to continue the R&D efforts initiated in Phase I. Funding is based on the results achieved in Phase I and the scientific and technical merit and commercial potential of the project proposed in Phase II. STTRs are completed in conjunction with a research institution.
Partnered Research Institution
UCLA Samueli School of Engineering
Topic Code
OSD22B-004
Agency Tracking Number
O22B-004-0002
Solicitation Number
22.B
Contact
Lynn Petersen
Status
(Open)
Last Modified 2/19/26
Period of Performance
3/1/24
Start Date
5/31/26
Current End Date
5/31/26
Potential End Date
Obligations
$1.7M
Total Obligated
$1.7M
Current Award
$1.7M
Potential Award
Award Hierarchy
Definitive Contract
W911NF24C0041
Subcontracts
Activity Timeline
Transaction History
Modifications to W911NF24C0041
People
Suggested agency contacts for W911NF24C0041
Competition
Number of Bidders
4
Solicitation Procedures
Negotiated Proposal/Quote
Evaluated Preference
None
Performance Based Acquisition
Yes
Commercial Item Acquisition
Commercial Item Procedures Not Used
Simplified Procedures for Commercial Items
No
Other Categorizations
Subcontracting Plan
Plan Not Required
Cost Accounting Standards
Exempt
Business Size Determination
Small Business
Defense Program
None
DoD Claimant Code
None
IT Commercial Item Category
Not Applicable
Awardee UEI
PDT5WE8U2624
Awardee CAGE
6ZYP2
Agency Detail
Awarding Office
W911NF W6QK ACC-APG DURHAM
Funding Office
HQ0287
Created By
kenneth.belk
Last Modified By
kenneth.belk
Approved By
kenneth.belk
Legislative
Legislative Mandates
None Applicable
Performance District
CA-49
Senators
Dianne Feinstein
Alejandro Padilla
Alejandro Padilla
Representative
Mike Levin
Modified: 2/19/26