OBJECTIVE
The objective is to design, develop, and demonstrate a low-noise amplifier (LNA) and power amplifier (PA) in a commercially available state-of-the-art GlobalFoundries (GF) 200-mm Gallium Nitride on Silicon technology (130RFG1) to improve higher output power density, linearity, and efficiency in radio communications systems for potential military and commercial applications.
DESCRIPTION
In radio communication system, the RFE of the transceiver typically handles the receive and transmit function portion, whereas the baseband signal processing is typically implemented with digital logic. The radio communication system sensitivity requirements and output power are primarily dependent on the performance of the frontend circuit blocks, specifically the low-noise amplifiers (LNAs) and power amplifiers (PAs). Most of the current radar and military communication systems utilize either Gallium Nitride (GaN) or other types of group III-V semiconductor technologies for the RF frontend (RFE) circuitry of the radio to achieve high output power and sensitivity performance [1] [2]. There are disparate GaN chips available in discrete form for PAs and LNAs from commercial vendors, however, there are currently no monolithic 200-mm GaN-on-Si technology solution for scaled integration [3] [4]. To address this gap, GlobalFoundries is developing a new innovative GaN-on-Si technology production capability with access to Multi-Project Wafer (MPW) prototyping run [5]. Additionally, GlobalFoundries partnered with Finwave semiconductor to provide disruptive RF performance solutions and accelerate product development for commercial mobile handset and currently there are no integrated scaled solution set for PAs and LNAs in the 200-mm GaN-on-Si technology space for dual use applications [6].
The advantages of GaN are the excellent physical properties such as higher electron mobility and current density compared to traditional silicon-based technology; and makes the device material an attractive solution for use in power amplifiers (PAs) designs to achieve high output handling capabilities [7]. Due to the wide bandgap property of Gallium Nitride, the material is fundamentally superior for use in RF systems and can achieved higher breakdown voltages, output power, and power efficiency. The power delivery and efficiency of Gallium Nitride (GaN) devices are unmatched compared to other similar technologies and has superior RF performance capabilities. The size, weight, area, and power (SWaP) can be further achieved by leveraging GaN-on-Si technology by integrating the front-end functions into radio communication systems to achieve higher output power density and efficiency [8]. Further, the GaN-on-Si technology can enable large-scaled integration and cost efficiency using silicon substrates providing competitive advantages and disruptive RF performance overmatch [9][10].
PHASE I
Demonstrate the feasibility of developing an integrated low-noise and power amplifier using a commercially available 200-mm GlobalFoundries GaN-on-Si technology. The feasibility study shall provide an evaluation and assessment on the process, models, components, and process design kit and present results, as well as comparing the PA and LNA designs to current state of the art performance. Additionally, the report shall fully describe the proposed following: design flow and approaches, architecture topologies and tradeoffs, matching networks, CAD (Computer-aided Design) tools, noise models, device characteristics, and benchmark simulations. The contractor shall investigate and provide an assessment on the integration impacts of the PA and LNA for noise, isolation, electromigration and thermal effects. For the PA, the contractor shall perform simulations to investigate power, thermal and electromigration effects to determine optimal achievable saturated output power. Further, the contractor shall also propose activities for packaging, testing and characterization of the LNA and PA for follow-on program phase development, along with potential commercialization and dual-use applications.
PHASE II
The contractor must be a DMEA accredited Trusted Supplier at time of proposal submission. Others may be evaluated based on a previous successful product sales or licensing in the RF market space. Based on the results of Phase I, the contractor shall use the learning to design, develop, and fabricate a functional LNA and PA on a GlobalFoundries 200-mm GaN-on-Si technology that perform to the specifications identified by DMEA choosing for dual use applications. The design of the LNA and PA shall conform to all of GlobalFoundries design and manufacturing rules and be limited to a specified die area that is subject to DMEA approval. The LNA and PA shall be simulated across process, supply, and temperature variations extended to military range. The fabricated designs shall be packaged, characterized, and tested to verify the measured versus simulation performance. The contractor shall deliver samples of the fully functional prototype of the Low-Noise Amplifier (LNA) and Power Amplifier (PA) along with the respective evaluation test-boards, and test methods and procedures to the USG (US Government). For testing and characterization of the fabricated power amplifier, the contractor shall investigate pulsed high-powered output, linearity, and load pull measurements and provide the test results in the final report.
The contractor shall deliver a detailed final report that documents the design process, flow, and toolset required to develop the microcircuit with all electrical characterization and test measurements. Additionally, the contractor shall deliver all the design collaterals and database, and technical data package (schematics, libraries, models, GDS files, simulation results, packaged, gerber files, BOM) to the USG. The final report shall contain sufficient technical detail and data such that an entity skilled in semiconductor design and manufacturing can repeat the presented results.
The contractor shall make available to the DIB (Defense Industrial Base) or other commercial partners access to the designed IP (Intellectual Property) with a licensing fee of under $50k per instantiation.
GFE (Government Furnished Equipment): TAPO will make available as GFE access to silicon space via a GlobalFoundries 130RFG1 MPW/Shuttle run up to a 50 mm2 tile, subject to availability. Schedule will be mutually determined by the contracting activity and the awardee.
PHASE III DUAL USE APPLICATIONS
There may be opportunities for the further development of this concept for use in both military and commercial activities. During a Phase III program, the contractor will further refine the designs and seek opportunities to integrate and apply the technology to specific military applications. Government applications include radar, communications, sensors, and electronic warfare. The contractor shall support the USG for test and validation and transitioning the technology for field use in a military communication system.
REFERENCES
T. Garg and S. Kale, "Recent Developments, Reliability Issues, Challenges and Applications of GaN HEMT Technology," in IEEE Electron Devices Reviews, vol. 1, pp. 16-30, October 2024
David Brown et.al., "Millimeter Wave GaN MMIC Technologies for Next-gen Defense Applications", IEEE International Microwave Symposium, 2023
https://www.qorvo.com/products/p/CMD184
https://www.qorvo.com/products/p/TGA2227
https://gf.com/manufacturing-services/multi-project-wafer-program/
https://www.microwavejournal.com/articles/42554-finwave-semiconductor-and-globalfoundries-partner-on-rf-gan-on-si-technology-for-cellular-handset-applications
Matthias Rudolph, "GaN HEMTs for low-noise amplification status and challenges," International Workshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits (INMMIC), April 2017
T. Boles, "GaN-on-silicon present challenges and future opportunities," 2017 12th European Microwave Integrated Circuits Conference (EuMIC), Nuremberg, Germany, 2017, pp. 21-24
Rongming Chu et al, "An Experimental Demonstration of GaN CMOS Technology", IEEE Electron Device Letters, Vol. 37, No. 3, March 2016
Bertrand Parvais and Hao Yu, "GaN based Devices for Advanced RF Applications Puts Technology Building Blocks in the Spotlight," Imec, microwave journal, april 2023, www.microwavejournal.com/articles/print/39930-gan-based-devices-for-advanced-rf-applications-puts-technology-building-blocks-in-the-spotlight
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