TECHNICAL POINT OF CONTACT (TPOC)
Shin Mou
Thaddeus Asel
PROJECTED CMMC LEVEL REQUIREMENT
Level 2 (Self)
TECHNOLOGY AREAS
Electronics
MODERNIZATION PRIORITIES
Microelectronics
KEYWORDS
high voltage, high power, radiation hardened (rad hard), power switch, single event burnout, electronics, product design kit (PDK)
OBJECTIVE
The objective of this topic is to build and demonstrate high-voltage radiation hardened semiconductor power switching electronics which enables novel space propulsion technologies (e.g., electrical propulsion) and high-voltage bus lines to advance space high-power systems. The desired results should deliver radiation-hardened (rad-hard) power switches with supplied voltage larger than 350 V up to 1 kV with high efficiency (> 80%).
ITAR
The technology within this topic is restricted under the International Traffic in Arms Regulation (ITAR), 22 CFR Parts 120-130, which controls the export and import of defense-related material and services, including export of sensitive technical data, or the Export Administration Regulation (EAR), 15 CFR Parts 730-774, which controls dual use items. Offerors must disclose any proposed use of foreign nationals (FNs), their country(ies) of origin, the type of visa or work permit possessed, and the statement of work (SOW) tasks intended for accomplishment by the FN(s) in accordance with section 3.5 of the Announcement. Offerors are advised foreign nationals proposed to perform on this topic may be restricted due to the technical data under US Export Control Laws.
DESCRIPTION
Historically, U.S. space dominance relied on a benign environment where assets operated statically to provide communication, intelligence, surveillance, reconnaissance (ISR), and positioning, navigation, and timing (PNT) functions. Today, space is a contested and active warfighting domain. In response, the U.S. Space Force (USSF) is adopting the "Maneuver Without Regret" (MWR) concept. Implementing MWR necessitates high-voltage architectures (200V 800V) to support next-generation Electric Propulsion (EP). Furthermore, space edge computing, a critical microelectronics technology that necessitates increased on-board power, is being developed to enhance autonomous decision-making for threat avoidance. USSF is also advancing Space-Based Solar Power (SBSP), aiming to beam solar energy via microwave or laser to contested terrestrial environments where traditional refueling is restricted. The transition from static to active space postures necessitates the transformation of space power systems. High-voltage (HV) power supplies and bus lines are critical for these applications, as size, weight, and power (SWaP) remain the primary constraints due to launch costs.
To demonstrate HV power systems in space, rad-hard power switches are critical enablers, and the state-of-the-art Si rad-hard power switches are derated to 350 V maximal. Since single event burnouts (SEB) caused by electrical field transience induced by heavy-ion radiation in space is the primary failure mechanism for HV power switches, it is desired to reduce the electrical field within the device through innovations with minimal penalty for the on resistance. Solutions with substantial increase of the on resistance is considered derating, which limits the efficiency - an important metric of this topic.
PHASE I
This topic is intended for technology proven ready to move directly into Phase II. Therefore, Phase I awards will not be made for this topic. The applicant is required to provide detail and documentation in the D2P2 proposal which demonstrates accomplishment of a Phase I-type effort, including a feasibility study. This includes determining, insofar as possible, the scientific and technical merit and feasibility of ideas appearing to have commercial potential. This feasibility may be demonstrated by providing evidence that the applicant's device can be fabricated using commercially-viable semiconductor foundry processes, providing a preliminary assessment of space-rated packaging solutions capable of handling both the high voltage and thermal extraction requirements in a vacuum, and/or clear evidence of a combination of advanced TCAD simulations, preliminary bench testing, or other practical demonstrations.
PHASE II
Phase II will focus on the design, fabrication, integration, and demonstration of high-voltage (HV) radiation-hardened (rad-hard) power switching devices capable of enabling next-generation space power switches, preferably through a commercial foundry process that will benefit the commercialization process in Phase III. The rad-hard power switches are expected to pass the 300 krad total ionizing dose standard without failure and need to have SEB immunity at Si linear transfer energy (LET) of 85 MeV cm2/mg with fluence at least 1E6 ions/cm2. It is expected to test SEB immunity in creditable domestic test facilities including but not limited to the NASA Space Radiation Laboratory at Brookhaven National Laboratory. These devices are expect to operate at biased voltage > 600 V during these radiation tests, preferably up to 1 kV. The efficiency of these power switches needs to be at least 80%. Finally, the wafer yield at the end of the Phase II is expected to be above 50%. Proposed solutions need to demonstrate single event immunity along with tolerances of other radiation effects (e.g., total ionizing dose) while keeping the power-switch efficiency high.
Phase II efforts should culminate in a prototype and supporting test data package that demonstrates technical performance, radiation survivability, manufacturability, and readiness for transition into Department of the Air Force and U.S. Space Force applications. Deliverables should include sufficient design, fabrication, test, and performance data to support subsequent qualification, packaging, reliability testing, and commercialization activities anticipated during Phase III.
PHASE III DUAL USE APPLICATIONS
Phase III represents the transition and commercialization of the SBIR funded research and development (R&D) efforts into Department of War (DoW) and commercial applications. The expected Phase III efforts involves further maturation and deployment of the developed technology, with the goal of achieving operational readiness and widespread adoption. The desired activities include but are not limited to product design kit (PDK) development, HV package development, and MIL-PRF-19500 screening and Reliability test.
Commercialization opportunities include dual-use applications in commercial satellite systems, in-space transportation, advanced power electronics, and other high-reliability semiconductor markets requiring radiation-hardened high-voltage switching technologies. Successful Phase III efforts should result in a qualified, manufacturable, and commercially sustainable product that enables resilient, maneuverable, and high-power space systems for both government and commercial customers. Successful Phase III efforts are expected to mature the technology from a demonstrated prototype toward a qualified production-ready component suitable for operational integration.
REFERENCES
V. Machi and R. Wall, "Why Orbital Maneuvering Is Top Of Mind At U.S. Space Command," Aviation Week Network, 4 10 2024. [Online]. Available: https://aviationweek.com/space/launch-vehicles-propulsion/why-orbital-maneuvering-top-mind-us-space-command?check_logged_in=1.
K. E. Bozak, L. R. Pi ero, R. J. Scheidegger, M. V. Aulisio, M. C. Gonzalez and A. G. Birchenough, "High Input Voltage, Silicon Carbide Power Processing Unit Performance Demonstration," in 13th International Energy Conversion Engineering Conference, Orlando, 2015. https://ntrs.nasa.gov/citations/20150023096.
Infineon Technologies, "650V Radiation Hard power MOSFET," Sept 2020. [Online]. Available: https://www.infineon.com/assets/row/public/documents/24/49/infineon-buy65cs28a-01-issue-2-datasheet-en.pdf?fileId=5546d46278d64ffd01793d27cc2b1d35.
J. L. Titus, "An Updated Perspective of Single Event Gate Rupture and Single Event Burnout in Power MOSFETs," IEEE Transactions on Nuclear Science, vol. 60, no. 3, pp. 1912-1928, 2013.https://ieeexplore.ieee.org/document/6510504.
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