Low Cost, High Power, Opening and Closing Switches

OUSD (R&E) CRITICAL TECHNOLOGY AREA(S): Microelectronics, Directed Energy The technology within this topic is restricted under the International Traffic in Arms Regulation (ITAR), 22 CFR Parts 120-130, which controls the export and import of defense-related material and services, including export of sensitive technical data, or the Export Administration Regulation (EAR), 15 CFR Parts 730-774, which controls dual use items. Offerors must disclose any proposed use of foreign nationals (FNs), their country(ies) of origin, the type of visa or work permit possessed, and the statement of work (SOW) tasks intended for accomplishment by the FN(s) in accordance with the Announcement. Offerors are advised foreign nationals proposed to perform on this topic may be restricted due to the technical data under US Export Control Laws. OBJECTIVE: Develop low cost, high power, semiconductor opening switches (SOS), fast ionization dynistor (FID), or reverse switching dynistor (RSD) with an emphasis on being able to produce these devices at volume production facilities. DESCRIPTION: Semiconductor opening and closing switches (SOS, FID, and RSD) are used for a variety of pulsed power systems and high-power microwave (HPM) systems for providing high peak power and repetition rates [1, 2]. While silicon drift step recovery diodes (DSRD) have been demonstrated and produced in limited quantities over the past several years, the related devices have not [3]. The final product should be stackable in order to achieve higher voltage and current. The drawback with stacked devices are internal inductance, capacitance, and resistance increasing and creating unwanted effects on the circuit. Most recently, research has been done on wide bandgap materials which has shown higher performance [4, 5]. However, this topic will focus on single device performance and cost. Prototypes and tests will be done on both single device and stacked devices. The U.S. does not have a manufacturing source for many semiconductor opening and closing switches. Dopant concentration and junction depths are important factors for producing these devices. Preferably, proposed SOS, FID, or RSD devices can be produced in existing commercial semiconductor fabrication facilities without any additional capital costs. Ideally, the manufacturing process will be done on at least 6 substrates to facilitate volume production and with highly controllable process techniques without requiring near substrate melting point processing or multi-day processing steps, which is required for optimum silicon (Si) based DSRDs. Additionally, costs per device must be kept low in order to allow for broad adaptation. Silicon carbide (SiC) based DSRDs have been investigated and proven superior in performance to Si based DSRDs [6, 7]. For similar reasons, SiC based SOS, FID, and RSD devices are of interest [8]. However, SiC substrates are known to be much more expensive compared to Si substrates and may impact the total cost for the device. Cost vs. performance tradeoffs will be considered. Ideal minimum single device characteristics for an opening switch: 1. Breakdown voltage: >800V with full width at half maximum (FWHM) 600V with FWHM