TECHNOLOGY AREAS: Sensors; Materials; Electronics The technology within this topic is restricted under the International Traffic in Arms Regulation (ITAR), 22 CFR Parts 120-130, which controls the export and import of defense-related material and services, including export of sensitive technical data, or the Export Administration Regulation (EAR), 15 CFR Parts 730-774, which controls dual use items. Offerors must disclose any proposed use of foreign nationals (FNs), their country(ies) of origin, the type of visa or work permit possessed, and the statement of work (SOW) tasks intended for accomplishment by the FN(s) in accordance with section 3.5 of the Announcement. Offerors are advised foreign nationals proposed to perform on this topic may be restricted due to the technical data under US Export Control Laws. OBJECTIVE: Develop a novel platform for quantum optical sensing using the III-Nitrides Materials system. DESCRIPTION: Novel quantum sensors offer the opportunity to measure a variety of properties with unprecedented precision and sensitivity. This includes sensors that potentially can measure temperature, acceleration, and magnetic fields with extreme accuracy. Quantum sensors based on optical systems (i.e., with an optical qubit) offer the unique capability of miniaturization, integration with existing systems, stability, and scalability. However, current quantum systems based on e.g., diamond and SiC have, despite decades long investments, not found widespread application for quantum sensing applications. Optical defects in these materials, such as nitrogen-vacancy (NV) centers in diamond and silicon vacancies (VSi) in SiC, have been extensively studied for their potential use in quantum technologies. While they have shown promise in various applications, there are still significant challenges that need to be addressed before they can be used effectively in quantum sensing. This includes control of the impurity incorporation, integration on the system level, and stable room temperature operation. III-Nitrides such as GaN, AlN, and AlGaN have been long investigated for optical and electrical devices. Recent theoretical and experimental works from various groups points to the potential of achieving single photon sources and optical qubits in bulk III-Nitrides. The published data indicates that these materials offer the potential to achieve qubits with room temperature stability. Moreover, III-Nitrides boast a well-established materials toolbox that facilitates rapid scaling and seamless integration with other similar-material devices, paving the way for a comprehensive photonic platform. In order to leverage III-Nitride based technology for quantum sensing applications qubits need to be established and integrated with appropriate photonic circuitry. PHASE I: As this is a Direct-to-Phase-II (D2P2) topic, no Phase I awards will be made as a result of this topic. To qualify for this D2P2 topic, the Government expects the applicant to demonstrate feasibility by means of a prior Phase I-type effort that does not constitute work undertaken as part of a prior SBIR/STTR funding agreement. Prior work expected to be completed in a "Phase-I type" effort, in order to qualify for this D2P2, requires demonstrated feasibility which should include work and results in the following areas: "Phase I-type" efforts should include growth and fabrication results to show feasibility of high performance and high quality films with low rms surface roughness and minimal unintentional defects. Performers should have requisite experience building constituent elements of the platform such as waveguides and sources. Early laboratory or field demos showcasing individual components for sensing capabilities are expected. PHASE II: Phase II will focus and the development and result in the demonstration of a new platform that allows for the development of quantum sensors. This platform should be based on the III-Nitrides materials system and operate in the UV-visible range of the spectrum. All needed parts for the quantum optical system and quantum sensor should be demonstrated which could include an integrated photonic circuit with all necessary elements (e.g., waveguides, cavities, up/ down converting elements, excitation, detection...). Eventually, the integrated circuit should be combined with a viable III-Nitride based qubit. PHASE III DUAL USE APPLICATIONS: Phase III awardees can expect that the developed platform will be used to demonstrate a quantum sensor (e.g., accelerometer, magnetometer, gravity gradiometer) for targeted military applications. Scalability and reliability of the quantum sensor should be demonstrated, and commercialization should be pursued. REFERENCES: 1. Castelletto, S., & Boretti, A. (2020). Silicon carbide color centers for quantum applications. Journal of Physics: Photonics, 2(2), 022001. 2. Varley, J. B., Janotti, A., & Van de Walle, C. G. (2016). Defects in AlN as candidates for solid-state qubits. Physical Review B, 93(16), 161201. 3. Berhane, A. M., Jeong, K. Y., Bodrog, Z., Fiedler, S., Schr der, T., Trivi o, N. V., ... & Aharonovich, I. (2017). Bright room temperature single photon emission from defects in gallium nitride. Advanced Materials, 29(12), 1605092. 4. Rigler, M., Buh, J., Hoffmann, M. P., Kirste, R., Bobea, M., Mita, S., ... & Zgonik, M. (2015). Optical characterization of Al-and N-polar AlN waveguides for integrated optics. Applied Physics Express, 8(4), 042603. 5. Lu, T. J., Fanto, M., Choi, H., Thomas, P., Steidle, J., Mouradian, S., ... & Englund, D. (2018). Aluminum nitride integrated photonics platform for the ultraviolet to visible spectrum. Optics express, 26(9), 11147-11160. KEYWORDS: Quantum sensing; precision; sensitivity; photon source; room temperature; qubit; nanophotonics
