DOC NIST - Nanometer-Scale Planar Wafers - MRAS

The U.S. General Services Administration (GSA), on behalf of the Department of Commerce (DOC) and the National Institute of Standards and Technology (NIST), is conducting market research to identify potential vendors capable of providing high-quality thin oxide, nitride, and epitaxial germinide films on silicon wafers. This effort is part of the CHIPS Metrology program, which aims to advance cutting-edge metrology capabilities within the U.S. semiconductor manufacturing ecosystem. The program collaborates with various stakeholders, including device manufacturers and materials suppliers, to address critical metrology gaps that can spur innovation in semiconductor manufacturing.

The solicitation requests vendors capable of delivering approximately sixty silicon wafers deposited with specific thin films. These wafers will serve as research-grade test materials for the CHIPS project focused on providing thin film standards with known thickness and composition to support semiconductor metrology community efforts. Vendors are expected to provide wafers from either 300 mm or 200 mm processing lines, with specific deposition requirements for oxide or nitride films such as HfO2, TiN, ZrO2, or SiN at thicknesses between 5 nm and 15 nm. Additionally, SiGe films are required with Ge concentrations ranging from 15% to 30%.

Each wafer must undergo rigorous measurement processes using both X-ray characterization techniques such as X-ray reflectivity or X-ray photoelectron spectroscopy and optical characterization techniques like spectroscopic ellipsometry. The goal is to ensure a minimum of five measurement points per wafer using an X-ray tool and a comprehensive map of at least 100 points per wafer using an optical tool. These measurements will facilitate comparison between fabrication-line measurements and CHIP R&D metrology analyses, promoting measurement reproducibility and comparability across the industry.

This initiative supports Grand Challenge 6 within the CHIPS R&D Metrology Program by standardizing new materials, processes, and equipment for microelectronics. By investing in these reference materials, NIST aims to enhance product development costs efficiency and performance repeatability within the semiconductor industry while benefiting broader public interests through improved technology development.