Contact Metallization for High-Temperature GaN Amplifiers

Background
NASA's National Space Science Center (NSSC) has a requirement for contact metallization for high-temperature Gallium Nitride (GaN) amplifiers. The goal of this contract is to enable the fabrication of GaN amplifiers that can operate at high temperatures, specifically at 800 °C in air for a minimum duration of one hour.

Work Details
The vendor shall deliver Ohmic contact metallization on AlGaN/GaN to facilitate the fabrication of GaN amplifiers as referenced in IEEE Electron Device Letters 46, 1309, 2025. The Ohmic contacts must support GaN amplifier operation at 800 °C for at least one hour in air, with a preference for longer operational duration. Additionally, the vendor is required to provide documented test results demonstrating stable specific contact resistance of the source/drain ohmic contact metallization as a function of temperature in air for a minimum of one hour, with an emphasis on achieving longer survival and stability. Furthermore, the vendor must deliver processes to NASA that enable GaN amplifier fabrication and ensure delivery within six months of receipt of the purchase order.

Period of Performance
The contract will be performed within six months from the receipt of the purchase order.

Place of Performance
Cleveland OH 44135 UNITED STATES

Bidder Requirements
Bidders must demonstrate capability in delivering Ohmic contact metallization suitable for high-temperature applications and provide documented test results as specified. There are no specific security clearances or licensing requirements mentioned.