OUSD (R&E) MODERNIZATION PRIORITY: Directed Energy; General Warfighting Requirements (GWR) TECHNOLOGY AREA(S): Sensors; Materials The technology within this topic is restricted under the International Traffic in Arms Regulation (ITAR), 22 CFR Parts 120-130, which controls the export and import of defense-related material and services, including export of sensitive technical data, or the Export Administration Regulation (EAR), 15 CFR Parts 730-774, which controls dual use items. Offerors must disclose any proposed use of foreign nationals (FNs), their country(ies) of origin, the type of visa or work permit possessed, and the statement of work (SOW) tasks intended for accomplishment by the FN(s) in accordance with the Announcement. Offerors are advised foreign nationals proposed to perform on this topic may be restricted due to the technical data under US Export Control Laws. Please direct questions to the Air Force SBIR/STTR HelpDesk: usaf.team@afsbirsttr.us. OBJECTIVE: Program objective is manufacturing process improvement to increase yield of optically clear, bulk, semiconductor materials for use as refractive elements in electro-optical infrared systems operating at wavelengths greater than 2 m. This requires large clear apertures (> 75 mm) and thicknesses (> 1 mm) to enable mechanical robustness such that the final elements can be cut/shaped, polished to optical quality specifications. Focus of the effort would be on improving the bulk uniformity to meet spectral and optical requirements for current and future EO/IR systems of interest to the DoD. Materials to investigate should include binary and ternary semiconductor materials having minimal linear absorption in the optical transparency window while at relevant temperature. DESCRIPTION: The government envisions a design of experiments (DOE) type of approach to optimize yield of optically clear, bulk, semiconductor materials for use as refractive elements in electro-optical infrared systems. These systems typically operate at wavelengths greater than 2 m and are cryogenically cooled. It is anticipated that one binary and one or two ternary compounds be chosen for the DOE. Proposals should discuss a path towards increasing clear apertures starting from 50 or 75 mm diameter to greater than 120 mm. Wafer-like parts should have consistent spectral performance, such as transmission and bandgap/cut-on wavelength, across the clear aperture and throughout the bulk. As grown material should be as close to intrinsic as possible and exhibit minimal linear absorption due to unwanted dopants. Bulk material should be >1 mm thick and increase to provide clearer aperture. Similarly, the parts should also have consistent optical performance across the clear aperture and bulk, demonstrated through minimization of scatter from point and macroscopic defects and inhomogeneity's. Parts should be optically isotropic and not exhibit birefringence. They should be mechanically robust to allow cutting, shaping and polishing to meet typical optical quality surface specifications such as flatness, parallelism and scratch-dig. There is also interest in metrology development for evaluating the bulk semiconductor material either during growth or immediately post growth, but prior to initial cutting or rough polish. For example, ensuring the desired optical bandgap has been grown prior to additional processing steps is of interest. Similarly, evaluation of material properties, such as dopant concentration, carrier lifetimes, mobility's, etc., as functions of the DOE process is also of relevance. The impact of post growth treatment, such as high temperature annealing, could also be a component of the DOE. PHASE I: This topic is intended for technology proven ready to move directly into a Phase II. Therefore, a Phase I award is not required. The offeror is required to provide detail and documentation in the Direct to Phase II proposal which demonstrates accomplishment of a Phase I-like effort, including a feasibility study. This includes determining, insofar as possible, the scientific and technical merit and feasibility of ideas appearing to have commercial potential. It must have validated the product-market fit between the proposed solution and a potential AF stakeholder. The offeror should have defined a clear, immediately actionable plan with the proposed solution and the AF customer. The feasibility study should have; -Identified the prime potential AF end user(s) for the non-Defense commercial offering to solve the AF need, i.e., how it has been modified; -Described integration cost and feasibility with current mission-specific products; -Described if/how the demonstration can be used by other DoD or Governmental customers. PHASE II: Eligibility for D2P2 is predicated on the offeror having performed a Phase I-like effort predominantly separate from the SBIR Programs. Under the phase II effort, the offeror shall sufficiently develop the technical approach, product, or process in order to conduct a small number of advanced manufacturing and/or sustainment relevant demonstrations. Identification of manufacturing/production issues and or business model modifications required to further improve product or process relevance to improved sustainment costs, availability, or safety, should be documented. Air Force sustainment stakeholder engagement is paramount to successful validation of the technical approach. These Phase II awards are intended to provide a path to commercialization, not the final step for the proposed solution. PHASE III DUAL USE APPLICATIONS: The contractor will pursue commercialization of the various technologies developed in Phase II for transitioning expanded mission capability to a broad range of potential government and civilian users and alternate mission applications. Direct access with end users and government customers will be provided with opportunities to receive Phase III awards for providing the government additional research & development, or direct procurement of products and services developed in coordination with the program. REFERENCES: https://www.sciencedirect.com/science/article/abs/pii/S0030401813004033?via%3Dihub KEYWORDS: infrared; optics; optical materials; nonlinear optics; semiconductors
