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Advanced Single-Photon Avalanche Diode for 1030 nm (SPAD-1030)

ID: OSD233-004 • Type: SBIR / STTR Topic • Match:  100%
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Description

OUSD (R&E) CRITICAL TECHNOLOGY AREA(S): Space Technology OBJECTIVE: Develop a single-photon avalanche detector for mm-accurate multi-kHz satellite and lunar laser ranging at 1030 nm. DESCRIPTION: High-accuracy satellite and lunar laser ranging (SLR/LLR) stations have heavily relied upon the availability of short pulse, frequency-doubled Nd:YAG and Yb:YAG lasers. This has driven SLR/LLR receive-detector development toward fairly wide-use of gated, large-area ( 100 m) Si-based single-pixel sensors having peak photon sensitivity ( 30%) near 532 nm, with quenching circuits and time-walk compensation for <18 picosecond (ps) timing jitter at multi-kHz repetition rates. Operating at 1030/1064 nm, however, provides significant advantages over green systems, including improved eye safety (flash blindness and dazzling) and better atmospheric transmission that manifest in gains in link margin and ranging precision. The aim of this effort is to design and develop a single-photon detector (single pixel, or array) optimized for for 1030 nm SLR/LLR applications according to notional specifications outlined in Table 1. Table 1. Performance Metrics Parameter Description Other Detail Notional Specifications Unit Min Typical Max Spectral response range 950 to 31150 nm Peak sensitivity wavelength 1030 nm Effective photosensitive diameter 100 mm Photon detection efficiency (PDE) Single photon 3 30 % Time walk -10 +10 ps Dark count 2500 Hz Internal/external gating frequency 1 107 Hz Gate duration range 0.5 1000 ns Gate duration step 100 ps Reference output Required TTL* Gate output Required TTL* Detection output Required TTL* External gate trigger input Required TTL* Operating temperature -20 35 C Detection head dimension LxWxH 137x50x50 mm Control unit dimension LxWxH 225x170x50 mm Cooling Time 5 min Connector type Preferred SMA** *Transitor-Transitor Logic **SubMiniature version A PHASE I: Trade study and design of a gated, Geiger-mode single-photon avalanche diode detection head and signal conditioning electronics, including quenching circuit and time-walk compensation logic according to Table 1. Details of the temperature stability and cooling architecture (i.e. thermoelectric cooler stages) shall be articulated. Develop a Phase II plan to build and test the SPAD-1030 prototype that includes schedule, cost, milestones and a device characterization plan. Deliver detailed trade study, analysis and initial design documentation in a Phase I technical data package. PHASE II: Design, fabricate, and integrate an engineering development unit of SPAD-1030 , that is consistent with performance identified in notional parameters in Table 1, and with Phase I trade study results and design activities. Characterize the PDE over the spectral response range. Work with a Government Laboratory partner to conduct an evaluation of the engineering development unit SPAD-1030 on an active laser ranging system. Upon successful developmental test and evaluation of the engineering unit, complete a final design incorporating lessons learned for optimized mission use and performance. Complete a comprehensive Phase III integrated schedule and unit cost estimate for the development, fabrication, and unit test of six (6) prototype SPAD-1030. Deliver engineering development unit, design documentation, and characterization plan, raw data, and analysis of results in a Phase 2 technical data package. PHASE III DUAL USE APPLICATIONS: Complete final design documentation, performance characterization and factory acceptance test plan. Complete fabrication, integration, updated prototype packaging and comprehensive performance characterization of six (6) SPAD-1030 prototype units according to the plan developed in Phase II. Work with Government Laboratory partner to integrate prototype SPAD-1030 with existing laser ranging system to verify performance for target mission. Deliver all prototypes and Phase III technical data package. REFERENCES: Kirchner, G. & Koidl, F. Compensation of SPAD time-walk effects. J. Opt. A: Pure Appl. 1, 163 (1999); Proch zka, I., Kodet, J. & Bla ej, J. Note: Solid state photon counters with sub-picosecond timing stability. Rev. Sci. Instr. 84, 046107 (2013); Mich lek, V., Proch zka, I. & Bla ej, J. Twenty years of Rad-Hard K14 SPAD in Space Projects. Sensors 15, 18178-18196; doi:10.3390/s150818178 (2015) KEYWORDS: Time-Walk Compensation; SPAD; 1064 nm; 1030 nm; Satellite Laser Ranging

Overview

Response Deadline
Oct. 18, 2023 Past Due
Posted
Aug. 23, 2023
Open
Sept. 20, 2023
Set Aside
Small Business (SBA)
Place of Performance
Not Provided
Source
Alt Source

Program
SBIR Phase I / II
Structure
Contract
Phase Detail
Phase I: Establish the technical merit, feasibility, and commercial potential of the proposed R/R&D efforts and determine the quality of performance of the small business awardee organization.
Phase II: Continue the R/R&D efforts initiated in Phase I. Funding is based on the results achieved in Phase I and the scientific and technical merit and commercial potential of the project proposed in Phase II. Typically, only Phase I awardees are eligible for a Phase II award
Duration
6 Months - 1 Year
Size Limit
500 Employees
On 8/23/23 National Geospatial-Intelligence Agency issued SBIR / STTR Topic OSD233-004 for Advanced Single-Photon Avalanche Diode for 1030 nm (SPAD-1030) due 10/18/23.

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