Advanced Electron Backscatter Diffraction (EBSD) detector offering high pixel density, high-speed and low noise operation, and low kV detection enabled by directly detecting electrons using an application specific integrated circuit (ASIC) detector
ID: 8 • Type: SBIR / STTR Topic
• Match:
95%
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This opportunity is a topic area under the Small Business Innovation Research / Small Business Technology Transfer (SBIR/STTR). Please see the source for documents.
Overview
Response Deadline
June 14, 2024
Past Due
Posted
April 16, 2024
Open
April 16, 2024
Set Aside
Small Business (SBA)
Place of Performance
Not Provided
Source
Alt Source
Program
SBIR
Phase I / II
Structure
Grant
Phase Detail
Phase I: Establish the technical merit, feasibility, and commercial potential of the proposed R/R&D efforts and determine the quality of performance of the small business awardee organization.
Phase II: Continue the R/R&D efforts initiated in Phase I. Funding is based on the results achieved in Phase I and the scientific and technical merit and commercial potential of the project proposed in Phase II. Typically, only Phase I awardees are eligible for a Phase II award
Phase II: Continue the R/R&D efforts initiated in Phase I. Funding is based on the results achieved in Phase I and the scientific and technical merit and commercial potential of the project proposed in Phase II. Typically, only Phase I awardees are eligible for a Phase II award
Duration
6 Months - 1 Year
Size Limit
500 Employees
On 4/16/24 National Institute of Standards and Technology issued SBIR / STTR Topic 8 for Advanced Electron Backscatter Diffraction (EBSD) detector offering high pixel density, high-speed and low noise operation, and low kV detection enabled by directly detecting electrons using an application specific integrated circuit (ASIC) detector due 6/14/24.
Documents
Posted documents for SBIR / STTR Topic 8
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