CHIPS R&D: Molecular dynamics simulation GAAFETs, Computer nodes (Muzny, Chris/Sasha)

Abstract We will use NIST's computational resources and theoretical expertise to assess heat transport within nanometers of the heat sources created by CMOS conductive channels. Extensive molecular dynamics simulations will be used to quantify heat transport, including boundary scattering. Combined with measurements, we will elucidate the physics behind nanoscale heat transport and provide data toward refining the existing finite-element models and ultimately laying foundation for enhanced transistor-level heat transport in the next-generation semiconductor devices. If successful, this project will shift the paradigm of nanoscale heat management from trial-and-error to knowledge-based engineering. Problem Statement(s) Thermal efficiency of semiconductor devices is pivotal to their operation and performance, especially now that the dimensions of transistor features are rapidly shrinking to the nanoscale. A significant knowle